OC-44N
| Number OC44N |
Case TO-1 |
Pol/Mat PG |
Vce 5 |
Vcb 15 |
IC 10 |
Vces 0 |
at IC 0 |
Min Hfe 45 |
Max Hfe 225 |
at IC 1 |
FT 7,5 |
at IC 1 |
Ptot 85 |
Suggested Use RF AMP |
| Number | The type number of the device |
| Case | Case style (sub categories are not included) |
| Pol | Polarity - N=NPN P=PNP |
| Mat | Material - G=Germanuim S=Silicon |
| Vce | Breakdown voltage; Collector to Emitter |
| Vcb | Breakdown voltage; Collector to Base |
| IC | Collector current (in milliamps) |
| Vces | Saturation voltage (when transistor is fully on with specified current IC) (V) |
| Hfe | Current gain (minimum and maximum are shown at specified current IC) |
| FT | Frequency Transition - the frequency where gain falls to unity MHz) |
| Ptot | Total power dissipation in milliwatts (at 25 degrees C) |
| Use | The intended purpose - this is not a specification but a suggestion |
